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Número de pieza | BYC5DX-500 | |
Descripción | Hyperfast power diode | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BYC5DX-500 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! BYC5DX-500
Hyperfast power diode
Rev. 1 — 6 July 2011
Product data sheet
1. Product profile
1.1 General description
Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package.
1.2 Features and benefits
Isolated plastic package
Low reverse recovery current
Low thermal resistance
Reduces switching losses in
associated MOSFET
1.3 Applications
Continuous Current Mode (CCM)
Power Factor Correction (PFC)
Half-bridge/full-bridge switched-mode
power supplies
Half-bridge lighting ballasts
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VRRM
repetitive peak
reverse voltage
IF(AV)
average forward
current
square-wave pulse; δ = 0.5;
Th = 103 °C;
see Figure 1; see Figure 2
Static characteristics
VF forward voltage
Dynamic characteristics
IF = 5 A; Tj = 25 °C; see Figure 5
IF = 5 A; Tj = 150 °C; see Figure 5
trr
reverse recovery
IF = 5 A; VR = 400 V;
time dIF/dt = 500 A/µs; Tj = 25 °C;
see Figure 6
Min Typ Max Unit
- - 500 V
- - 5A
- 1.5 2 V
- 1.15 1.45 V
- 16 - ns
1 page NXP Semiconductors
6. Isolation characteristics
Table 6.
Symbol
Visol(RMS)
Cisol
Isolation characteristics
Parameter
RMS isolation voltage
isolation capacitance
Conditions
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
f = 1 MHz; from cathode to external
heatsink
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
VF forward voltage
IR reverse current
Dynamic characteristics
IF = 5 A; Tj = 25 °C; see Figure 5
IF = 5 A; Tj = 150 °C; see Figure 5
IF = 10 A; Tj = 150 °C; see Figure 5
VR = 500 V; Tj = 100 °C
VR = 500 V
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C; see Figure 6
IF = 5 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 25 °C; see Figure 6
IRM peak reverse recovery IF = 5 A; VR = 400 V; dIF/dt = 500 A/µs;
current
Tj = 100 °C; see Figure 6
IF = 5 A; VR = 400 V; dIF/dt = 50 A/µs;
Tj = 125 °C; see Figure 6
VFR
forward recovery
IF = 5 A; dIF/dt = 100 A/µs; Tj = 25 °C;
voltage
see Figure 7
BYC5DX-500
Hyperfast power diode
Min Typ Max Unit
- - 2500 V
- 10 - pF
Min Typ Max Unit
-
1.5 2
V
- 1.15 1.45 V
- 1.4 1.7 V
-
0.9 3
mA
- 9 40 µA
- 15 30 ns
- 16 - ns
-
9.5 11
A
-
0.9 3
A
- 9 11 V
BYC5DX-500
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 July 2011
© NXP B.V. 2011. All rights reserved.
5 of 11
5 Page NXP Semiconductors
12. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
6 Isolation characteristics . . . . . . . . . . . . . . . . . . .5
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8
10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9
10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9
10.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
10.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10
11 Contact information. . . . . . . . . . . . . . . . . . . . . .10
BYC5DX-500
Hyperfast power diode
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 6 July 2011
Document identifier: BYC5DX-500
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet BYC5DX-500.PDF ] |
Número de pieza | Descripción | Fabricantes |
BYC5DX-500 | Hyperfast power diode | NXP Semiconductors |
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