PDF ZXMS6003GQ Data sheet ( Hoja de datos )

Número de pieza	ZXMS6003GQ
Descripción	N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET
Fabricantes	Diodes
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No Preview Available ! Green ZXMS6003GQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET®MOSFET WITH PROGRAMMABLE CURRENT LIMIT Product Summary • Continuous Drain Source Voltage VDS = 60V • On-State Resistance 500mΩ • Nominal Load Current (VIN = 5V) 1.4A • Clamping Energy 550mJ Description Self protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch, with status indication and programmable current limit. Applications • Especially suited for loads with a high in-rush current such as lamps and motors • All types of resistive, inductive and capacitive loads in switching applications • μC compatible power switch for 12V and 24V DC applications. • Automotive rated • Replaces electromechanical relays and discrete circuits • Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS, in order not to compromise the load current during normal operation. The design max. DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. • Note: This does not compromise the product's ability to self- protect during short-circuit load conditions • The current limit is programmable via an external resistor Rprog connected between Status and IN pins • Status pin voltage reflects the gate drive being applied internally to the power MOSFET • With VIN = 5V and Rprog = 24kΩ: Status voltage: 5V indicates normal operation. Status voltage: (2-3)V indicates that the device is in current-limiting mode. Status voltage < 1V indicates that the device is in thermal shutdown. Features and Benefits • Current Limit Programmable Via External Resistor • Status Pin (analog status indication) • Logic Level Input • Short Circuit Protection with Auto Restart • Over Voltage Protection (active clamp) • Thermal Shutdown with Auto Restart • Over-Current Protection • Input Protection (ESD) • Load Dump Protection (actively protects load) • High Continuous Current Rating • Qualified to AEC-Q101 Standards for High Reliability • PPAP Capable • Lead-Free Finish; RoHS compliant (Note 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data • Case: SOT223 • Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish • Weight: 0.112 grams (approximate) SOT223 Top View ote: RPROG must be connected between the Status and IN pins N Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q100 qualified and are PPAP capable. Automotive, AEC-Q100 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. IntelliFET is a trademark of Diodes Incorporated. ZXMS6003GQ Document number: DS33607 Rev. 1 - 2 1 of 9 www.diodes.com April 2014 © Diodes Incorporated 1 page ZXMS6003GQ Electrical Characteristics (@Tamb = +25°C, unless otherwise stated.) Parameter Static Characteristics Symbol Min Typ Max Unit Conditions Drain-Source Clamp Voltage Off State Drain Current Off State Drain Current Input Threshold Voltage (Note 9) Input Current Input Current Input Current Static Drain-Source On-State Resistance VDS(AZ) 60 70 75 V ID = 10mA IDSS — 0.1 3 µA VDS = 12V, VIN = 0V IDSS — 3 15 µA VDS = 32V, VIN = 0V VIN(th) 1 2.1 — V VDS = VGS, ID = 1mA IIN — 0.7 1.2 mA VIN = +5V IIN — 1.5 2.7 mA VIN = +7V IIN —4 7 mA VIN = +10V RDS(ON) — 520 675 mΩ VIN = 5V, ID = 0.2A Static Drain-Source On-State Resistance RDS(ON) — 385 500 mΩ VIN = 10V, ID = 0.5A Current Limit (Note 10) Current Limit (Note 10) Dynamic Characteristics ID(LIM) ID(LIM) 0.2 0.3 0.4 0.7 0.9 1.2 A VIN = 5V, VDS = 10V RPROG = 20k A VIN = 10V, VDS = 10V, RPROG = 20k Turn-On Time (VIN to 90% ID) tON — 3 10 µs RPROG = 20k, RL = 22Ω, VIN = 0 to 10V, VDD = 12V Turn-Off Time (VIN to 90% ID) TOFF — 13 20 µs RPROG = 20k, RL = 22Ω, VIN = 10V to 0V, VDD = 12V Slew Rate On (70 to 50% VDD) DVDS/dtON — 8 20 V/µs RPROG= 20k, RL = 22Ω, VIN = 0 to 10V, VDD = 12V Slew Rate Off (50 to 70% VDD) DVDS/dtON — 3.2 10 V/µs RPROG = 20k, RL = 22Ω, VIN = 10V to 0V, VDD = 12V Protection Functions (Note 10) Required Input Voltage for Over Temperature Protection VPROT 4.5 — — V Thermal Overload Trip Temperature Thermal hysteresis Unclamped Single Pulse Inductive Energy TJ = +25°C Unclamped Single Pulse Inductive Energy TJ = +150°C Status Flag TJT — EAS EAS 150 175 —1 — — °C °C 550 — — mJ ID(ISO) = 0.7A, VDD = 32V 200 — — mJ ID(ISO) = 0.7A, VDD = 32V Normal Operation Current Limit Operating Thermal Shutdown Activated Normal Operation Current Limit Operation Thermal Shutdown Activated Inverse Diode VSTATUS — 4.95 — VSTATUS — 2.5 — VSTATUS — 0.2 1 VSTATUS — 8 — VSTATUS — 3 — VSTATUS — 0.35 1 V VIN = 5V V VIN = 5V V VIN = 5V V VIN = 10V V VIN = 10V V VIN = 10V Source Drain Voltage VSD — — 1 V VIN = 0V, -ID = 1.4A, Notes: 9. Protection features may operate outside spec for VIN<4.5V 10. The drain current is limited to a reduced value when Vds exceeds a safe level. 11. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous, repetitive operation. IntelliFET is a trademark of Diodes Incorporated. ZXMS6003GQ Document number: DS33607 Rev. 1 - 2 5 of 9 www.diodes.com April 2014 © Diodes Incorporated 5 Page

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