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Número de pieza | DMN65D8LQ | |
Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
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No Preview Available ! DMN65D8LQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
60V
RDS(ON)
3Ω @ VGS = 10V
4Ω @ VGS = 5V
Package
SOT23
ID
TA = +25°C
310mA
270mA
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Applications
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating - Matte Tin Finish Annealed over Alloy 42
Leadframe).
Weight: 0.006 grams (Approximate)
SOT23
Drain
D
ESD PROTECTED TO 1kV
Top View
GS
Top View
Pin Configuration
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
DMN65D8LQ-7
DMN65D8LQ-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMN65D8LQ
Document number: DS38179 Rev. 1 - 2
1 of 8
www.diodes.com
September 2015
© Diodes Incorporated
1 page DMN65D8LQ
1 1,000
0.1
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 7. Diode Forward Voltage vs. Current
50
45 f = 1MHz
40
35
30
25 Ciss
20
15
10
Coss
5
0 Crss
0 5 10 15 20 25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Typical Junction Capacitance
100
TA = 150°C
TA = 125°C
10
TA = -55°C TA = 25°C TA = 85°C
1
0 10 20 30 40 50
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 8. Typical Drain-Source Leakage Current vs. Voltage
1
RD S( o n )
Limited
PW = 100µs
DC
0.1
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
0.01
PW = 1ms
TJ(m ax) = 150°C
TA = 25°C
VGS = 4.5V
Single Pulse
0.001 DUT on 1 * MRP Board
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 SOA, Safe Operation Area
100
DMN65D8LQ
Document number: DS38179 Rev. 1 - 2
5 of 8
www.diodes.com
September 2015
© Diodes Incorporated
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet DMN65D8LQ.PDF ] |
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