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Número de pieza | AUIRF3805L-7P | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AUIRF3805L-7P (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! AUTOMOTIVE GRADE
PD - 96318
AUIRF3805S-7P
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
AUIRF3805L-7P
HEXFET® Power MOSFET
D V(BR)DSS
55V
G
S
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
RDS(on) typ. 2.0mΩ
imax. 2.6mΩ
ID 240A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating.
These features combine to make this design an
extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
DD
S
G S SS S
D2Pak 7 Pin
AUIRF3805S-7P
GD
S
GSSS S
TO-263CA 7 Pin
AUIRF3805L-7P
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the
device. These are stress ratings only; and functional operation of the device at these or any other condition
beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
cID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
240
170
160
1000
300
A
W
VGS
EAS
EAS (tested)
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
jSingle Pulse Avalanche Energy (Thermally Limited)
dSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
2.0
± 20
440
680
See Fig.12a,12b,15,16
2.3
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Thermal ResMisotuanntincgetorque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
RθJC
RθCS
RθJA
RθJA
Parameter
hJunction-to-Case
Case-to-Sink, Flat, Greased Surface
gJunction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10
1 page AUIRF3805S/L-7P
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
12.0
ID= 140A VDS= 64V
10.0 VDS= 40V
8.0
6.0
4.0
2.0
0.0
0
50 100
QG Total Gate Charge (nC)
150
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
10000
1000
100
10
TJ = 175°C
TJ = 25°C
1
VGS = 0V
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
10msec
10
DC
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
5 Page AUIRF3805S/L-7P
TO-263CA 7 Pin Long Leads Package Outline
Dimensions are shown in millimeters (inches)
TO-263CA - 7 Pin Part Marking Information
Part Number
IR Logo
AUIRF3805L-7
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet AUIRF3805L-7P.PDF ] |
Número de pieza | Descripción | Fabricantes |
AUIRF3805L-7P | Power MOSFET ( Transistor ) | International Rectifier |
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