PDF CPH6429 Data sheet ( Hoja de datos )

Número de pieza	CPH6429
Descripción	N-Channel Silicon MOSFET
Fabricantes	ON Semiconductor
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No Preview Available ! CPH6429 Ordering number : ENN8081 CPH6429 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2✕0.8mm) Ratings 60 ±10 2 8 1.6 150 --55 to +150 Unit V V A A W °C °C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Marking : ZF V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=1A, VGS=2.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit min 60 0.4 1.8 Ratings typ max Unit V 1 µA ±10 µA 1.3 V 3.6 S 170 220 mΩ 190 270 mΩ 325 pF 29 pF 21 pF 11 ns 17 ns 40 ns 27 ns Continued on next page. © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com Publication Order Number: CPH6429/D 1 page

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