(PDF) SPN1032 Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	SPN1032
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPN1032 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1032 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS  Drivers : Relays/Solenoids/Lamps/Hammers  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers FEATURES  N-Channel 30V/0.95A,RDS(ON)=550mΩ@VGS=4.5V 30V/0.75A,RDS(ON)=650mΩ@VGS=2.5V 30V/0.65A,RDS(ON)=850mΩ@VGS=1.8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-523 (SC-89-3L) package design PIN CONFIGURATION( SOT-523 / SC-89-3L ) PART MARKING 2015/06/18 Ver.1 Page 1 1 page SPN1032 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2015/06/18 Ver.1 Page 5 5 Page

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PDF SPN1032 Data sheet ( Hoja de datos )