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PDF PMN27XPEA Data sheet ( Hoja de datos )
| Número de pieza | PMN27XPEA | |
| Descripción | single P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMN27XPEA
20 V, single P-channel Trench MOSFET
19 June 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Fast switching
• Trench MOSFET technology
• 2 kV ESD protection
• AEC-Q101 qualified
3. Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tamb = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; ID = -3 A; Tj = 25 °C
Min Typ Max Unit
- - -20 V
-12 -
12 V
[1] - - -5.7 A
- 27 30 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMN27XPEA
20 V, single P-channel Trench MOSFET
Symbol
Rth(j-sp)
Parameter
Conditions
thermal resistance
from junction to solder
point
Min Typ Max Unit
- 13 15 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s
103 017aaa761
Zth(j-a)
(K/W) duty cycle = 1
0.75
102
0.33
0.2
0.5
0.25
0.1
10 0.05
0.02
0.01 0
1
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa762
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.5
0.33
0.2
10
0.25
0.1
0.05
0.02
0 0.01
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMN27XPEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 16
5 Page 
NXP Semiconductors
12. Package outline
Plastic surface-mounted package (TSOP6); 6 leads
DB
PMN27XPEA
20 V, single P-channel Trench MOSFET
SOT457
E AX
y
654
HE v M A
pin 1
index
1
e
2
bp
3
wM B
A
A1
Q
Lp
detail X
c
01
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 bp
c
D
E
e
HE Lp
Q
v
w
y
mm
1.1 0.1 0.40 0.26
0.9 0.013 0.25 0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
SOT457
IEC
REFERENCES
JEDEC
JEITA
SC-74
Fig. 18. Package outline TSOP6 (SOT457)
PMN27XPEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 June 2014
EUROPEAN
PROJECTION
ISSUE DATE
05-11-07
06-03-16
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 16
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| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PMN27XPEA.PDF ] | |
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