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PDF PMGD290UCEA Data sheet ( Hoja de datos )
| Número de pieza | PMGD290UCEA | |
| Descripción | 725 / 500 mA N/P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
28 March 2014
Product data sheet
1. General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very
small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Very fast switching
• Trench MOSFET technology
• 2 kV ESD protection
• AEC-Q101 qualified
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
• Automotive applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
TR1 (N-channel), Static characteristics
RDSon
drain-source on-state VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
resistance
TR2 (P-channel), Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -400 mA; Tj = 25 °C
resistance
TR1 (N-channel)
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
TR2 (P-channel)
VDS drain-source voltage Tj = 25 °C
[1]
Min Typ Max Unit
- 290 380 mΩ
- 670 850 mΩ
--
-8 -
--
--
20 V
8V
725 mA
-20 V
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NXP Semiconductors
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
-10
ID
(A)
-1
Limit RDSon = VDS/ID
aaa-007203
tp = 1 ms
-10-1
DC; Tsp = 25 °C
tp = 10 ms
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
tp = 100 ms
-10-2
-10-1
IDM = single pulse
-1
-10 -102
VDS (V)
Fig. 4. TR2 (P-channel): safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
TR1 (N-channel)
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
TR2 (P-channel)
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
Per device
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Min Typ Max Unit
[1] -
[2] -
-
390 445 K/W
340 390 K/W
- 130 K/W
[1] -
[2] -
-
390 445 K/W
340 390 K/W
- 130 K/W
[1] - - 300 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
PMGD290UCEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 21
5 Page 
NXP Semiconductors
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
0.7
ID
(A)
0.6
0.5
0.4
017aaa355
1.75
a
1.50
1.25
017aaa356
0.3
0.2
(2) (1)
0.1
1.00
0.75
0.0
0.0 0.5 1.0 1.5 2.0 2.5
VGS (V)
VDS > ID × RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
0.50
-60 0 60 120 180
Tj (°C)
Fig. 14. TR1; Normalized drain-source on-state
resistance as a function of junction
temperature; typical values
Fig. 13. TR1; Transfer characteristics: drain current as a
function of gate-source voltage; typical values
1.25
VGS(th)
(V)
1.00
017aaa357
(1)
102
C
(pF)
017aaa358
(1)
0.75
0.50
(2)
(3)
(2)
10
(3)
0.25
0.00
-60 0 60
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
120 180
Tj (°C)
Fig. 15. TR1; Gate-source threshold voltage as a
function of junction temperature
1
10- 1
1
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
10 102
VDS (V)
Fig. 16. TR1; Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
PMGD290UCEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 21
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