|
|
PDF PMEG3050EP Data sheet ( Hoja de datos )
| Número de pieza | PMEG3050EP | |
| Descripción | MEGA Schottky barrier rectifier | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PMEG3050EP (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
PMEG3050EP
5 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 10 December 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features
Average forward current: IF(AV) ≤ 5 A
Reverse voltage: VR ≤ 30 V
Low forward voltage
High power capability due to clip-bond technology
AEC-Q101 qualified
Small and flat lead SMD plastic package
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1. Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
Tamb ≤ 35 °C
[1] -
-
5
Tsp ≤ 130 °C
--5
VR reverse voltage
- - 30
VF forward voltage
IF = 5 A
- 315 360
IR reverse current
VR = 30 V
- 2.6 8
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Unit
A
A
V
mV
mA
1 page  
NXP Semiconductors
PMEG3050EP
5 A low VF MEGA Schottky barrier rectifier
102
Zth(j-a)
(K/W)
10
duty cycle =
1 0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02 0.01
1
0
006aab754
10−1
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 1 A
IF = 3 A
IF = 5 A
IR
reverse current
VR = 5 V
VR = 30 V
Cd diode capacitance f = 1 MHz
VR = 1 V
VR = 10 V
Min Typ Max Unit
- 240 275 mV
- 285 340 mV
- 315 360 mV
- 330 - μA
-
2.6 8
mA
- 800 - pF
- 260 - pF
PMEG3050EP_1
Product data sheet
Rev. 01 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
12. Revision history
Table 9. Revision history
Document ID
Release date
PMEG3050EP_1
20091210
Data sheet status
Product data sheet
PMEG3050EP
5 A low VF MEGA Schottky barrier rectifier
Change notice
-
Supersedes
-
PMEG3050EP_1
Product data sheet
Rev. 01 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
11 of 13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet PMEG3050EP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PMEG3050EP | MEGA Schottky barrier rectifier | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |