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PDF PMDXB550UNE Data sheet ( Hoja de datos )
| Número de pieza | PMDXB550UNE | |
| Descripción | dual N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PMDXB550UNE
30 V, dual N-channel Trench MOSFET
25 March 2015
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Low threshold voltage
• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
• Exposed drain pad for excellent thermal conduction
3. Applications
• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = 4.5 V; ID = 590 mA; Tj = 25 °C
resistance
[1]
Min Typ Max Unit
--
-8 -
--
30 V
8V
590 mA
- 550 670 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
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NXP Semiconductors
PMDXB550UNE
30 V, dual N-channel Trench MOSFET
Symbol
Rth(j-sp)
103
Parameter
Conditions
thermal resistance
from junction to solder
point
Min Typ Max Unit
- 27 31 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
aaa-015677
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
0.33
102 0.20
0.25
0.10
0.05
0.02
0.01
0
10
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-015678
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
102 0.33
0.20
0.25
0.10
0.05
0.02
0.01
0
10
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for drain 1 cm2
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDXB550UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 15
5 Page 
NXP Semiconductors
13. Soldering
Footprint information for reflow soldering of DFN1010B-6 package
PMDXB550UNE
30 V, dual N-channel Trench MOSFET
SOT1216
0.35
1.3 1.2 0.5
0.35
0.9
0.35
0.35
0.15 0.2 (6x) 0.15
0.3 (6x)
1
1.35
0.25
0.6 1.1
0.25
solder land
solder land plus solder paste
occupied area
solder resist
Dimensions in mm
Issue date
13-03-06
14-07-28
Fig. 20. Reflow soldering footprint for DFN1010B-6 (SOT1216)
PMDXB550UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 March 2015
sot1216_fr
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 15
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| PDF Descargar | [ Datasheet PMDXB550UNE.PDF ] | |
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