|
|
PDF PMDXB1200UPE Data sheet ( Hoja de datos )
| Número de pieza | PMDXB1200UPE | |
| Descripción | dual P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PMDXB1200UPE (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
|
No Preview Available !
PMDXB1200UPE
30 V, dual P-channel Trench MOSFET
25 March 2015
Product data sheet
1. General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Low threshold voltage
• Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = -4.5 V; ID = -410 mA; Tj = 25 °C
resistance
[1]
Min Typ Max Unit
--
-8 -
--
-30
8
-410
V
V
mA
- 1.2 1.4 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
Scan or click this QR code to view the latest information for this product
1 page  
NXP Semiconductors
PMDXB1200UPE
30 V, dual P-channel Trench MOSFET
Symbol
Rth(j-sp)
103
Parameter
Conditions
thermal resistance
from junction to solder
point
Min Typ Max Unit
- 27 31 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
aaa-015677
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
0.33
102 0.20
0.25
0.10
0.05
0.02
0.01
0
10
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-015678
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
102 0.33
0.20
0.25
0.10
0.05
0.02
0.01
0
10
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for drain 1 cm2
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDXB1200UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 15
5 Page 
NXP Semiconductors
13. Soldering
Footprint information for reflow soldering of DFN1010B-6 package
PMDXB1200UPE
30 V, dual P-channel Trench MOSFET
SOT1216
0.35
1.3 1.2 0.5
0.35
0.9
0.35
0.35
0.15 0.2 (6x) 0.15
0.3 (6x)
1
1.35
0.25
0.6 1.1
0.25
solder land
solder land plus solder paste
occupied area
solder resist
Dimensions in mm
Issue date
13-03-06
14-07-28
Fig. 20. Reflow soldering footprint for DFN1010B-6 (SOT1216)
PMDXB1200UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 March 2015
sot1216_fr
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PMDXB1200UPE.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PMDXB1200UPE | dual P-channel Trench MOSFET | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |