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Número de pieza | CHA3666-FAA | |
Descripción | 6-16GHz Low Noise Amplifier | |
Fabricantes | United Monolithic Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CHA3666-FAA (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! CHA3666-FAA
6-16GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD package
Description
The CHA3666-FAA is a two-stage
self-biased wide band monolithic low noise
amplifier.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is proposed in leadless surface mount
hermetic metal ceramic 6x6mm² package.
The overall power supply is of 4V/80mA.
The circuit is dedicated to space applications
and also well suited for a wide range of
microwave and millimetre wave applications
and systems.
UMS
A3666
YYWW
Main Features
■ Broadband performance 6-16GHz
■ 1.8dB typical Noise Figure
■ 24dBm 3rd order intercept point
■ 16dBm power at 1dB compression
■ 21dB gain
■ Low DC power consumption
■ 6x6mm² metal ceramic hermetic package
30
25
20
15
10
+25 C
+85 C
-40 C
5
0
2 4 6 8 10 12 14 16 18 20 22 24 26
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min Typ Max Unit
Fop Operating frequency range
6 16 GHz
NF Noise figure
1.8 2.5 dB
G Small signal Gain
18.5 21
dB
IP3 3rd order intercept point
24 dBm
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA3666-FAA2356 - 21 Dec 12
1/12 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
1 page 6-16GHz Low Noise Amplifier
CHA3666-FAA
Typical boards Measurements
Temp = +25°C, Vd1 = Vd2 = +4.0V, P1 and N2 grounded, P2: NC, typical Id=80mA
Measurements in the connector planes, using the proposed land pattern & board 99622.
Noise Figure versus Frequency and Temperature
5
4
+25 C +85 C -40 C
3
2
1
0
6 8 10 12 14 16 18
Frequency (GHz)
20
19
18
17
16
15
14
13
12
11
10
6
Output power at 1dB compression versus frequency
-40 C +25 C +85 C
8 10 12 14
Frequency (GHz)
16
Ref. : DSCHA3666-FAA2356 - 21 Dec 12
5/12 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5 Page 6-16GHz Low Noise Amplifier
Note
CHA3666-FAA
Ref. : DSCHA3666-FAA2356 - 21 Dec 12
11/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet CHA3666-FAA.PDF ] |
Número de pieza | Descripción | Fabricantes |
CHA3666-FAA | 6-16GHz Low Noise Amplifier | United Monolithic Semiconductors |
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