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Número de pieza | BYV25F-600 | |
Descripción | Enhanced ultrafast power diode | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BYV25F-600 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! BYV25F-600
Enhanced ultrafast power diode
Rev. 02 — 7 March 2011
Product data sheet
1. Product profile
1.1 General description
Enhanced ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package.
1.2 Features and benefits
High thermal cycling performance
Low on-state losses
Low thermal resistance
Soft recovery characteristic
1.3 Applications
Dual Mode (DCM and CCM) PFC
Power Factor Correction (PFC) for
Interleaved Topology
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VRRM
IF(AV)
repetitive peak
reverse voltage
average forward
current
square-wave pulse; δ = 0.5;
Tmb ≤ 126 °C; see Figure 1;
see Figure 2
Static characteristics
VF forward voltage IF = 5 A; Tj = 25 °C;
see Figure 5
IF = 5 A; Tj = 150 °C;
see Figure 5
Dynamic characteristics
trr reverse recovery IF = 1 A; VR = 30 V;
time dIF/dt = 100 A/µs; Tj = 25 °C;
see Figure 6
Min Typ Max Unit
- - 600 V
- - 5A
- 1.3 1.9 V
- 1.1 1.7 V
- 17.5 35 ns
1 page NXP Semiconductors
BYV25F-600
Enhanced ultrafast power diode
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
VF forward voltage
IR reverse current
Dynamic characteristics
IF = 5 A; Tj = 25 °C; see Figure 5
IF = 5 A; Tj = 150 °C; see Figure 5
VR = 600 V; Tj = 100 °C
VR = 600 V; Tj = 25 °C
Qr
trr
IRM
VFRM
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; see Figure 6
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; see Figure 6
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; see Figure 6
IF = 1 A; dIF/dt = 100 A/µs; Tj = 25 °C;
see Figure 7
Min Typ Max Unit
- 1.3 1.9 V
- 1.1 1.7 V
- - 1.5 mA
- - 50 µA
- 13 - nC
- 17.5 35 ns
- 1.5 - A
- 3.2 - V
20
IF
(A)
16
003aaf445
12
(1) (2) (3)
8
4
0
0123
VF (A)
Vo = 1.499 V; Rs = 0.041 Ω
(1) Tj = 150 °C; typical values;
(2) Tj = 150 °C; maximum values;
(3) Tj = 25 °C; maximum values;
Fig 5. Forward current as a function of forward
voltage
IF
dlF
dt
trr
Qr
IR IRM
time
25 %
100 %
003aac562
Fig 6. Reverse recovery definitions; ramp recovery
BYV25F-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 March 2011
© NXP B.V. 2011. All rights reserved.
5 of 11
5 Page NXP Semiconductors
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9
9.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10
10 Contact information. . . . . . . . . . . . . . . . . . . . . .10
BYV25F-600
Enhanced ultrafast power diode
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 7 March 2011
Document identifier: BYV25F-600
11 Page |
Páginas | Total 11 Páginas | |
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Número de pieza | Descripción | Fabricantes |
BYV25F-600 | Enhanced ultrafast power diode | NXP Semiconductors |
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