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PDF BYV10X-600P Data sheet ( Hoja de datos )
| Número de pieza | BYV10X-600P | |
| Descripción | Ultrafast power diode | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BYV10X-600P
Ultrafast power diode
3 January 2014
Product data sheet
1. General description
Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
• Fast switching
• Isolated plastic package
• Low leakage current
• Low forward voltage drop
• Low thermal resistance
• Soft recovery characteristic
3. Applications
• High frequency switched-mode power supplies
• Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5 ; Th ≤ 71 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
Static characteristics
VF
forward voltage
IF = 10 A; Tj = 150 °C; Fig. 6
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 10 A
- - 1.6 V
- 20 - ns
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1 page  
NXP Semiconductors
BYV10X-600P
Ultrafast power diode
Symbol
Parameter
Conditions
IF = 10 A; Tj = 150 °C; Fig. 6
IR
reverse current
VR = 600 V; Tj = 25 °C
VR = 500 V; Tj = 150 °C
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C; Fig. 7
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 1.6 V
- - 10 µA
- - 250 µA
- 35 50 ns
- 20 - ns
- 40 - ns
20
IF
(A)
15
aaa-008980
IF
dlF
dt
trr
10 (1) (2) (3)
5
0
0 0.5 1 1.5 2 2.5
VF (V)
Fig. 6. Forward current as a function of forward
voltage
time
25 %
Qr 100 %
IR IRM
003aac562
Fig. 7. Reverse recovery definitions; ramp recovery
BYV10X-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 January 2014
© NXP N.V. 2014. All rights reserved
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