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Número de pieza | BYQ72EW-200 | |
Descripción | Dual ultrafast power diode | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! BYQ72EW-200
Dual ultrafast power diode
14 May 2015
Product data sheet
1. General description
Dual ultrafast power diode in a SOT429 (3-lead TO-247) plastic package.
2. Features and benefits
• Very low on-state loss
• Fast switching
• Soft recovery characteristic minimizes power consuming oscillations
• High reverse surge capability
• High thermal cycling performance
• Low thermal resistance
3. Applications
Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5; Tmb ≤ 113 °C; square-wave
pulse; per diode; Fig. 1; Fig. 2; Fig. 3
Static characteristics
VF
forward voltage
IF = 15 A; Tj = 150 °C; Fig. 6
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 200 V
- - 15 A
- 0.78 0.9 V
- 18 25 ns
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1 page NXP Semiconductors
BYQ72EW-200
Dual ultrafast power diode
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Rth(j-a)
thermal resistance
from junction to
ambient
Conditions
with heatsink compound; per diode;
Fig. 5
with heatsink compound; both diodes
conducting
in free air
10
Zth(j-mb)
(K/W)
1
Min Typ Max Unit
- 1.2 2.4 K/W
- 0.7 1.4 K/W
- 45 - K/W
003aal045
10-1
δ = 0.5
δ = 0.3
10-2 δ = 0.1
δ = 0.05
δ = 0.02
10-3 δ = 0.01
P
tp
δ= T
10-4
10-6
10-5
single pulse
10-4
10-3
10-2
10-1
tp
T
1
tp (s)
t
10
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse width; per diode;
maximum values
BYQ72EW-200
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 11
5 Page NXP Semiconductors
13. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Marking ................................................................... 2
8 Limiting values .......................................................3
9 Thermal characteristics .........................................5
10 Characteristics ....................................................... 6
11 Package outline ..................................................... 8
12 Legal information ...................................................9
12.1 Data sheet status ................................................. 9
12.2 Definitions .............................................................9
12.3 Disclaimers ...........................................................9
12.4 Trademarks ........................................................ 10
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 14 May 2015
BYQ72EW-200
Dual ultrafast power diode
BYQ72EW-200
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 11
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet BYQ72EW-200.PDF ] |
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BYQ72EW-200 | Dual ultrafast power diode | NXP Semiconductors |
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