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PDF BYC8X-600P Data sheet ( Hoja de datos )

Número de pieza BYC8X-600P
Descripción Hyperfast power diode
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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No Preview Available ! BYC8X-600P Hoja de datos, Descripción, Manual

BYC8X-600P
Hyperfast power diode
3 August 2015
Product data sheet
1. General description
Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
Fast switching
Isolated plastic package
Low leakage current
Low reverse recovery current
Low thermal resistance
Reduces switching losses in associated MOSFET
3. Applications
Continuous Current Mode (CCM) Power Factor Correction (PFC)
Half-bridge/full-bridge switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5 ; Th ≤ 75 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
IFRM repetitive peak forward δ = 0.5 ; tp = 25 µs; Th ≤ 75 °C; square-
current
wave pulse
IFSM
non-repetitive peak
tp = 10 ms; Tj(init) = 25 °C; sine-wave
forward current
pulse; Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave
pulse; Fig. 4
Static characteristics
VF
forward voltage
IF = 8 A; Tj = 25 °C; Fig. 6
IF = 8 A; Tj = 125 °C; Fig. 6
IF = 8 A; Tj = 150 °C
Min Typ Max Unit
- - 600 V
- - 8A
- - 16 A
- - 91 A
- - 100 A
- - 3.4 V
- 1.5 1.9 V
- 1.4 - V
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BYC8X-600P pdf
NXP Semiconductors
BYC8X-600P
Hyperfast power diode
9. Thermal characteristics
Table 6.
Symbol
Rth(j-h)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
heatsink
thermal resistance
from junction to
ambient free air
Conditions
without heatsink compound
with heatsink compound; Fig. 5
10
Zth(j-h)
(K/W)
1
001aaf257
Min Typ Max Unit
- - 7.2 K/W
- - 5.5 K/W
- 60 - K/W
10- 1
P
δ=
tp
T
10- 2
10- 3
10- 6
10- 5 10- 4
10- 3
10- 2
tp
T
10- 1
t
1 10
tp (s)
Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse width
10. Isolation characteristics
Table 7. Isolation characteristics
Symbol
Parameter
Conditions
Visol(RMS)
RMS isolation voltage
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
Cisol isolation capacitance from cathode to external heatsink
Min Typ Max Unit
- - 2500 V
- 10 - pF
BYC8X-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 11

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BYC8X-600P arduino
NXP Semiconductors
14. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Marking ................................................................... 2
8 Limiting values .......................................................3
9 Thermal characteristics .........................................5
10 Isolation characteristics ........................................5
11 Characteristics ....................................................... 6
12 Package outline ..................................................... 8
13 Legal information ...................................................9
13.1 Data sheet status ................................................. 9
13.2 Definitions .............................................................9
13.3 Disclaimers ...........................................................9
13.4 Trademarks ........................................................ 10
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 3 August 2015
BYC8X-600P
Hyperfast power diode
BYC8X-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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