|
|
Número de pieza | BYC8DX-600 | |
Descripción | Hyperfast power diode | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BYC8DX-600 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! BYC8DX-600
Hyperfast power diode
Rev. 01 — 27 December 2010
Product data sheet
1. Product profile
1.1 General description
Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package.
1.2 Features and benefits
Isolated plastic package
Low reverse recovery current
Low thermal resistance
Reduces switching losses in
associated MOSFET
1.3 Applications
Continuous Current Mode (CCM)
Power Factor Correction (PFC)
Half-bridge/full-bridge switched-mode
power supplies
Half-bridge lighting ballasts
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VRRM
repetitive peak
reverse voltage
IF(AV)
average forward
current
square-wave pulse; δ = 0.5 ;
Th = 47 °C;
see Figure 1; see Figure 2
Static characteristics
VF forward voltage IF = 8 A; Tj = 150 °C;
see Figure 4
Dynamic characteristics
IF = 8 A; Tj = 25 °C
trr reverse recovery IF = 8 A; VR = 400 V;
time dIF/dt = 500 A/µs; Tj = 25 °C;
see Figure 5
Min Typ Max Unit
- - 600 V
- - 8A
- 1.5 1.85 V
- 2 2.9 V
- 20 - ns
1 page NXP Semiconductors
BYC8DX-600
Hyperfast power diode
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
VF forward voltage
IR reverse current
Dynamic characteristics
IF = 8 A; Tj = 150 °C; see Figure 4
IF = 8 A; Tj = 25 °C
VR = 500 V; Tj = 100 °C
VR = 600 V
Qr
recovered charge
IF = 1 A; VR = 100 V; dIF/dt = 100 A/µs
trr reverse recovery time IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 100 °C
IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C
IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 25 °C; see Figure 5
IRM peak reverse recovery IF = 10 A; VR = 400 V; dIF/dt = 500 A/µs;
current
Tj = 100 °C
IF = 8 A; VR = 400 V; dIF/dt = 50 A/µs;
Tj = 125 °C
VFR
forward recovery
IF = 10 A; dIF/dt = 100 A/µs; Tj = 25 °C;
voltage
see Figure 6
Min Typ Max Unit
- 1.5 1.85 V
- 2 2.9 V
-
1.1 3
mA
- 9 40 µA
- 13 - nC
- 32 40 ns
- 30 52 ns
- 20 - ns
- 9.5 12 A
- 1.5 5.5 A
- 8 10 V
20
IF
(A)
16
12
8
4
0
0
(1) (2)
12
003aac976
(3)
34
VF (V)
IF
dlF
dt
trr
Qr
IR IRM
time
25 %
100 %
003aac562
Fig 4. Forward current as a function of forward
voltage
Fig 5. Reverse recovery definitions; ramp recovery
BYC8DX-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 December 2010
© NXP B.V. 2010. All rights reserved.
5 of 11
5 Page NXP Semiconductors
12. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
6 Isolation characteristics . . . . . . . . . . . . . . . . . . .4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8
10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9
10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9
10.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
10.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10
11 Contact information. . . . . . . . . . . . . . . . . . . . . .10
BYC8DX-600
Hyperfast power diode
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 27 December 2010
Document identifier: BYC8DX-600
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet BYC8DX-600.PDF ] |
Número de pieza | Descripción | Fabricantes |
BYC8DX-600 | Hyperfast power diode | NXP Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |