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PDF BYC8B-600P Data sheet ( Hoja de datos )
| Número de pieza | BYC8B-600P | |
| Descripción | Hyperfast power diode | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BYC8B-600P
Hyperfast power diode
26 February 2014
Product data sheet
1. General description
Hyperfast power diode in a SOT404 (D2PAK) surface-mountable plastic package.
2. Features and benefits
• Fast switching
• Surface-mountable package
• Low leakage current
• Low reverse recovery current
• Low thermal resistance
• Reduces switching losses in associated MOSFET
3. Applications
• Continuous Current Mode (CCM) Power Factor Correction (PFC)
• Half-bridge/full-bridge switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5; Tmb ≤ 130 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
Static characteristics
VF
forward voltage
IF = 8 A; Tj = 125 °C; Fig. 6
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 8A
- 1.5 1.9 V
- 12 18 ns
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1 page  
NXP Semiconductors
BYC8B-600P
Hyperfast power diode
Symbol
IRM
Parameter
Conditions
IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 25 °C; Fig. 7
peak reverse recovery IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs;
current
Tj = 25 °C; Fig. 7
IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs;
Tj = 125 °C; Fig. 7
Min Typ Max Unit
- 19 - ns
- - 2.2 A
- - 6A
16
IF
(A)
12
003aaj903
IF
dlF
dt
trr
8 (1) (2) (3)
4
0
01234
VF (V)
Fig. 6. Forward current as a function of forward
voltage
time
25 %
Qr 100 %
IR IRM
003aac562
Fig. 7. Reverse recovery definitions; ramp recovery
BYC8B-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 February 2014
© NXP N.V. 2014. All rights reserved
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BYC8B-600P.PDF ] | |
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