|
|
Número de pieza | BYC30X-600P | |
Descripción | Hyperfast power diode | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BYC30X-600P (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! BYC30X-600P
Hyperfast power diode
4 February 2013
Product data sheet
1. General description
Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
• Isolated plastic package
• Low leakage current
• Low reverse recovery current
• Low thermal resistance
• Reduces switching losses in associated MOSFET or IGBT
3. Applications
• Active PFC in air conditioner
• Continuous Current Mode (CCM) Power Factor Correction (PFC)
• Half-bridge/full-bridge switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5 ; Th ≤ 51 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
Static characteristics
VF
forward voltage
IF = 30 A; Tj = 150 °C; Fig. 6
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 30 A
- 1.38 1.8 V
- - 35 ns
Scan or click this QR code to view the latest information for this product
1 page NXP Semiconductors
BYC30X-600P
Hyperfast power diode
Symbol
Parameter
Conditions
IF = 30 A; Tj = 150 °C; Fig. 6
IR
reverse current
VR = 600 V; Tj = 25 °C
VR = 600 V; Tj = 150 °C
Dynamic characteristics
Qr
recovered charge
IF = 30 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
IF = 30 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C; Fig. 7
IF = 30 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
IF = 30 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
IRM peak reverse recovery IF = 30 A; VR = 200 V; dIF/dt = 200 A/
current
µs; Tj = 25 °C; Fig. 7
IF = 30 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
Min Typ Max Unit
- 1.38 1.8 V
- - 10 µA
- - 600 µA
- 50 - nC
- 280 - nC
- - 35 ns
- - 35 ns
- 70 - ns
- 3.5 - A
- 7.6 - A
40
IF
(A)
30
003aak742
IF
dlF
dt
trr
20
(1) (2)
(3)
10
0
0123
VF (V)
Fig. 6. Forward current as a function of forward
voltage
time
25 %
Qr 100 %
IR IRM
003aac562
Fig. 7. Reverse recovery definitions; ramp recovery
BYC30X-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 February 2013
© NXP B.V. 2013. All rights reserved
5/9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BYC30X-600P.PDF ] |
Número de pieza | Descripción | Fabricantes |
BYC30X-600P | Hyperfast power diode | NXP Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |