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PDF BYC10X-600P Data sheet ( Hoja de datos )
| Número de pieza | BYC10X-600P | |
| Descripción | Hyperfast power diode | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BYC10X-600P
Hyperfast power diode
9 May 2014
Product data sheet
1. General description
Hyperfast power diode in a SOD113A (2-lead TO-220-F) plastic package.
2. Features and benefits
• Fast switching
• Isolated plastic package
• Low leakage current
• Low reverse recovery current
• Low thermal resistance
• Reduces switching losses in associated MOSFET or IGBT
3. Applications
• Active PFC in air conditioner
• High frequency switched-mode power supplies
• Continuous Current Mode (CCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5; Th ≤ 61 °C; square-wave pulse;
Fig. 1; Fig. 2; Fig. 3
Static characteristics
VF
forward voltage
IF = 10 A; Tj = 150 °C; Fig. 6
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 10 A
-
1.3 2
V
- 12 18 ns
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NXP Semiconductors
BYC10X-600P
Hyperfast power diode
Symbol
Parameter
Conditions
IF = 10 A; Tj = 150 °C; Fig. 6
IR
reverse current
VR = 600 V; Tj = 25 °C
VR = 600 V; Tj = 150 °C
Dynamic characteristics
Qr
recovered charge
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
IF = 10 A; VR = 400 V; dIF/dt = 500 A/
µs; Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
IRM peak reverse recovery IF = 10 A; VR = 200 V; dIF/dt = 200 A/
current
µs; Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
Min Typ Max Unit
-
1.3 2
V
- - 10 µA
- - 0.8 mA
- 26 - nC
- 83 - nC
- 12 18 ns
- 19 - ns
- 26 - ns
- 34 - ns
- 2- A
- 4.8 - A
20
IF
(A)
15
aaa-010185
IF
dlF
dt
trr
10
(1) (2)
(3)
5
0
01234
VF (V)
Fig. 6. Forward current as a function of forward
voltage
time
25 %
Qr 100 %
IR IRM
003aac562
Fig. 7. Reverse recovery definitions; ramp recovery
BYC10X-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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