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PDF 1SS344 Data sheet ( Hoja de datos )
| Número de pieza | 1SS344 | |
| Descripción | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Diode Silicon Epitaxial Schottky Planar Type
1SS344
Ultra High Speed Switching Application
1SS344
Unit: mm
z Low forward voltage
: VF (3) = 0.50V (typ.)
z Fast reverse recovery time : trr = 20ns (typ.)
z High average forward current : IO = 0.5A (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
25 V
Reverse voltage
VR 20 V
Maximum (peak) forward current
IFM
1500
mA
Average forward current
Surge current (10ms)
Power dissipation
IO
IFSM
P
500 mA
5A
200 mW
Junction temperature
Tj 125 °C
Storage temperature
Operating Temperature
Tstg −55~125 °C JEDEC
Topr −40~100 °C EIAJ
TD-236MOD
SC-59
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
1-3G1B
temperature/current/voltage and the significant change in
Weight: 0.012g
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 10mA
― IF = 100mA
― IF = 500mA
― VR = 10V
― VR = 20V
― VR = 0, f = 1MHz
― IF = 50mA, (Fig.1)
Min Typ. Max Unit
― 0.30 ―
― 0.38 ―
V
― 0.50 0.55
― ― 20
― ― 100 μA
― 120 ―
pF
― 20 ― ns
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SS344.PDF ] | |
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