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PDF 1SS337 Data sheet ( Hoja de datos )

Número de pieza 1SS337
Descripción DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! 1SS337 Hoja de datos, Descripción, Manual

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS337
Ultra High-Speed Switching Applications
1SS337
Unit: mm
z Small package: SC-59
z Low forward voltage: VF (3) = 0.88 V (typ.)
z Fast reverse recovery time: trr = 6 ns (typ.)
z Small total capacitance: CT = 1.6 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
IFM
IO
IFSM
P
600 *
200 *
6*
150
mA
mA
A
mW
Junction temperature
Storage temperature
Tj 150 °C JEDEC
Tstg
55 to 150
°C
JEITA
TO-236MOD
SC-59
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
1-3G1F
temperature/current/voltage and the significant change in
Weight: 0.012 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
IF = 10 mA
IF = 100 mA
IF = 200 mA
VR = 30 V
VR = 80 V
VR = 0, f = 1 MHz
IF = 30 mA, Fig.1
Min Typ. Max Unit
0.66
0.80
V
0.88 1.20
― ― 0.25
― ― 0.50 μA
1.6 pF
6 20 ns
1 2008-11-11

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