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PDF 1SS311 Data sheet ( Hoja de datos )

Número de pieza 1SS311
Descripción DIODE (HIGH VOLTAGE/ HIGH SPEED SWITCHING APPLICATIONS)
Fabricantes Toshiba Semiconductor 
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No Preview Available ! 1SS311 Hoja de datos, Descripción, Manual

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS311
1SS311
High Voltage,High Speed Switching Applications
z Low forward voltage
: VF = 0.94V (typ.)
z High voltage
: VR = 400V (min)
z Fast reverse recovery time : trr = 1.5ns (typ.)
z Small total capacitance : CT = 3.2pF (typ.)
z Small package
: SC59
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
VRM
VR
IFM
IO
IFSM
P
420 V
400 V
300 mA
100 mA
2A
150 mW
Junction temperature
Tj 125 °C
Storage temperature
Tstg
55125
°C JEDEC
JEITA
SC61
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
13G1B
Weight: 0.012g (typ.)
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
IR (1)
IR (2)
CT
Test
Circuit
Test Condition
IF = 10mA
IF = 100mA
VR = 300V
VR = 400V
VR = 0, f = 1MHz
Reverse recovery time
trr IF = 10mA
Min Typ. Max Unit
0.80
V
0.94 1.20
― ― 0.1
― ― 1.0 μA
3.2 5.0 pF
1.5 μs
Marking
1 2007-11-01

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