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PDF STP75N75F4 Data sheet ( Hoja de datos )
| Número de pieza | STP75N75F4 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
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STP75N75F4
N-channel 75 V, 0.0092 Ω typ., 78 A STripFET™ DeepGATE™
Power MOSFET in a TO-220 package
Datasheet — production data
Features
Type
STP75N75F4
VDSS
75 V
RDS(on) max
< 0.011 Ω
ID
78 A
■ N-channel enhancement mode
■ 100% avalanched rated
■ Low gate charge
■ Very low on-resistance
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using ST’s STripFET™ DeepGATE™
technology. The device has a new gate structure
and is specially designed to minimize on-state
resistance to provide superior switching
performance.
TAB
3
2
1
TO-220
Figure 1. Internal schematic diagram
$ 4!"
'
3
!-V
Table 1. Device summary
Order codes
STP75N75F4
Marking
75N75F4
Package
TO-220
Packaging
Tube
July 2012
This is information on a product in full production.
Doc ID 023484 Rev 1
1/12
www.st.com
12
1 page  
STP75N75F4
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 78 A, VGS = 0
-
-
-
78 A
312 A
1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 78 A, VDD = 60 V
67
di/dt = 100 A/µs,
- 183
Tj = 150 °C
5.5
(see Figure 15)
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 023484 Rev 1
5/12
5 Page 
STP75N75F4
5 Revision history
Table 9. Document revision history
Date
Revision
24-Jul-2012
1 First release.
Revision history
Changes
Doc ID 023484 Rev 1
11/12
11 Page | ||
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| PDF Descargar | [ Datasheet STP75N75F4.PDF ] | |
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