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Número de pieza | PTFB091802FC | |
Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PTFB091802FC (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! PTFB091802FC
Thermally-Enhanced High Power RF LDMOS FET
180 W, 28 V, 920 – 960 MHz
Description
The PTFB091802FC LDMOS FET is designed for use in power
amplifier applications in the 920 MHz to 960 MHz frequency band.
Features include high gain and a thermally-enhanced package with
earless flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTFB091802FC
Package H-37248-4
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1400 mA, ƒ = 960 MHz
3GPP WCDMA signal,
PAR = 10.0 dB, 3.84 MHz BW
24
Gain
20
60
40
16 Efficiency
12
20
0
8 PAR @ 0.01% CCDF
4
-20
-40
0
25
-60ptfb091802fc_g1
30 35 40 45 50 55
Average Output Power (dBm)
Features
• Broadband internal input and output matching
• Dual path design (2 X 90 W)
• Typical CW performance at 960 MHz, 28 V
- Ouput power @ P1dB = 206 W
- Efficiency = 56%
- Gain = 18 dB
• Capable of handling 10:1 VSWR @ 28 V, 180 W
(CW) output power
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS-compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon production test fixture)
VDD = 28 V, IDQ = 1400 mA, POUT = 55 W avg, ƒ1 =920 MHz, ƒ2 = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol
Gain
Drain Efficiency
Adjancent Channel Power Ratio
Gps
hD
ACPR
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Min
18
32
—
Typ
19.5
34
–35
Max
—
—
–33
Unit
dB
%
dBc
Rev. 02.1, 2016-06-10
1 page Reference Circuit , 920 – 960 MHz
RO4350, .020
(62)
VDD
C805
R803
C101 C106 C105 R102
R101
R805
C107
C104 C110
RF_IN
C102
C103
R801
C801 C802
C804
R802
S3 S1
C803
S2 R804
R103
C109
C108
PTB091802FC_IN_01
Reference circuit assembly diagram (not to scale)
PTFB091802FC
RO4350, .020
(62)
C203 C214
VDD
C202 C206 C205 C216
C201 C208 C207 C209
C212
C211
C215
RF_OUT
C204
C213
CC221100
PTB091802FC_OUT_01
ptfb091802fc_CD_03-26-2015
Data Sheet
5 of 9
Rev. 02.1, 2016-06-10
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet PTFB091802FC.PDF ] |
Número de pieza | Descripción | Fabricantes |
PTFB091802FC | Thermally-Enhanced High Power RF LDMOS FET | Infineon |
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