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PDF PJD9N10A Data sheet ( Hoja de datos )
| Número de pieza | PJD9N10A | |
| Descripción | 100V N-Channel MOSFET | |
| Fabricantes | Pan Jit International | |
| Logotipo |  |
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PPJD9N10A
100V N-Channel MOSFET
Voltage
100 V Current
9A
Features
RDS(ON), VGS@10V,ID@4.5A<152mΩ
RDS(ON), VGS@4.5V,ID@3.0A<158mΩ
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
TO-252
Case : TO-252 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0104 ounces, 0.297grams
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25oC
TC=100oC
Pulsed Drain Current (Note 1)
TC=25oC
Power Dissipation
TC=25oC
TC=100oC
Continuous Drain Current
TA=25oC
TA=70oC
Power Dissipation
TA=25oC
Power Dissipation
TA=70oC
Single Pulse Avalanche Energy (Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal resistance(Note 4,5) Junction to Case
Junction to Ambient
Limited only By Maximum Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
ID
PD
EAS
TJ,TSTG
RθJC
RθJA
LIMIT
100
+20
9
6
18
31
12
2.4
1.9
2.0
1.3
1.8
-55~150
4.0
62.5
UNITS
V
V
A
W
A
A
W
mJ
oC
oC/W
July 9,2015-REV.00
Page 1
1 page  
PPJD9N10A
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Thermal Transient Impedance
July 9,2015-REV.00
Page 5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PJD9N10A.PDF ] | |
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