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Número de pieza | FDD5810 | |
Descripción | N-Channel Logic Level Trench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDD5810 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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FDD5810
N-Channel Logic Level Trench® MOSFET
60V, 36A, 27mΩ
Features
RDS(ON) = 22mΩ (Typ.), VGS = 5V, ID = 29A
Qg(5) = 13nC (Typ.), VGS = 5V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse / Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
Applications
Motor / Body Load Control
ABS Systems
Powertrain Management
Injection System
DC-DC converters and Off-line UPS
Distributed Power Architecture and VRMs
Primary Switch for 12V and 24V systems
AD FREE I
D
G
S
DTO-P-2A5K2
(TO-252)
D
G
S
©2006 Fairchild Semiconductor Corporation
FDD5810 Rev. A (W)
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25°C unless otherwise noted
200
100 10us
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
100us
1
0.1
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
1ms
10ms
DC
10 100 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
500
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
100 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10 STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.001
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
60
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VDD = 6V
40
TJ = 25oC
20
0
0
TJ = 175oC
TJ = -55oC
1.0 2.0 3.0 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
5.0
60
VGS = 10V
VGS = 5V
40
VGS = 4.5V
VGS = 4V
VGS = 3.5V
20
0
0
VGS = 3V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
TC = 25oC
0.5 1.0 1.5 2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.5
Figure 8. Saturation Characteristics
30
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
26
ID = 35A
22
18
ID = 1A
14
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
2.8
PULSE DURATION = 80μs
2.4 DUTY CYCLE = 0.5% MAX
2.0
1.6
1.2
0.8
0.4
-80
ID = 32A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD5810 Rev. A (W)
5
www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDD5810.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDD5810 | N-Channel Logic Level Trench MOSFET | Fairchild Semiconductor |
FDD5810_F085 | N-Channel Logic Level Trench MOSFET | Fairchild Semiconductor |
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