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PDF NCP6361 Data sheet ( Hoja de datos )

Número de pieza NCP6361
Descripción Buck Converter
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No Preview Available ! NCP6361 Hoja de datos, Descripción, Manual

NCP6361
Buck Converter with
Bypass Mode for RF Power
Amplifiers
The NCP6361, a PWM synchronous step−down DC−to−DC
converter, is optimized for supplying RF Power Amplifiers (PAs) used
in 3G/4G wireless systems (Mobile / Smart Phones, Tablets,)
powered by single−cell Lithium−Ion batteries. The device is able to
deliver up to 2 A current in bypass mode and 800 mA in buck mode.
The output voltage is monitorable from 0.4 V to 3.5 V by an analog
control pin VCON. The analog control allows dynamically optimizing
the RF Power Amplifier’s efficiency through the monitoring of the PA
output power. With an improved overall system efficiency the
communication time and phone autonomy can be consequently
increased. At light load for optimizing the DC−to−DC converter
efficiency, the NCP6361 enters automatically in PFM mode and
operates in a slower switching frequency. The NCP6361 enters in
bypass mode when the desired output voltage becomes close to the
input voltage (e.g.: low battery conditions). The device operates at
3.429 MHz or 6 MHz switching frequency. This way the system
tuning can focus respectively either on a better efficiency (3.249 MHz)
or on employing smaller value inductor and capacitors (6 MHz).
Synchronous rectification and automatic PFM / PWM / By−Pass
operating mode transitions improve overall solution efficiency. The
NCP6361 has two versions: NCP6361A and NCP6361B. Version B
has a spread spectrum function for low EMI operation. The NCP6361
is available in a space saving, low profile 1.36 x 1.22 mm CSP−9
package.
http://onsemi.com
MARKING
DIAGRAM
WLCSP9
CASE 567GM
6361x
ALYWW
G
6361x = Specific Device Code
x = A or B
A = Assembly Location
L = Wafer Lot
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 19 of this data sheet.
Features
Input Voltage from 2.5 V to 5.5 V for Battery Powered
Applications
Adjustable Output Voltage (0.4 V to 3.50 V)
3.429 / 6 MHz Selectable Switching Frequency
Uses 470 nH Inductor and 4.7 mF Capacitor for
Optimized Footprint and Solution Thickness
PFM /PWM/Bypass Automatic Mode Change for High
Efficiency
Low 45 mA Quiescent Current
Thermal Protections to Avoid Damage of the IC
Small 1.36 x 1.22 mm / 0.4 mm Pitch CSP Package
This is a Pb−Free Device
Typical Applications
3G / 4G Wireless Systems, Smart−Phones and Webtablets
NCP6361
VBATT
Battery or
System
Supply
Bypass
Enable
BPEN
Bypass Control
Bypass
FB
VCON
AGND
FSEL
EN
Vout Control
Thermal
Protection
Enabling
DCDC
1.0A
3.43/6.00 MHz
PVIN
10uF
SW
0.47uH
PGND
VOUT
4.7uF
Figure 1. NCP6361 Block Diagram
© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 5
1
Publication Order Number:
NCP6361/D

1 page




NCP6361 pdf
NCP6361
ELECTRICAL CHARACTERISTICS
Min and Max Limits apply for TA up to +85°C unless otherwise specified. PVIN = 3.6 V (Unless otherwise noted). Typical values are
referenced to TA = + 25°C and default configuration
Symbol
Parameter
Conditions
Min Typ Max Unit
SUPPLY CURRENT: PIN PVIN
IQ Operating quiescent current
ISLEEP
Product sleep mode current
IOFF Product off current
DCDC CONVERTER
DCDC on – no load – no
switching, EN = High
TA = up to +85°C
PVIN = 2.5 V to 5.5 V
VCON < 0.1 V, EN = High
TA = up to +85°C
EN = Low
PVIN = 2.3 V to 5.5 V
TA = up to +85°C
− 45 60 mA
− 55 70 mA
− 0.9 3 mA
PVIN
VOUT_MIN
VOUT_MAX
Gain
VOUT_ACC
Input Voltage Range
Minimum Output Voltage
Maximum Output Voltage
VCON to VOUT Gain
VOUT Accuracy
VCON = 0.16 V (Note 8)
VCON = 1.40 V (Note 8)
Ideal = 2.5 x VCON
2.5 − 5.5 V
0.35 0.40 0.45
V
3.45 3.50 3.55
V
2.5 V/V
−50 +50 mV
−3 +3 %
FSW1
FSW2
RONHS
RONLS
RONBP
IPKHS
IPKLS
DCMAX
h
Switching Frequency
Switching Frequency
P−Channel MOSFET On Resistance
N−Channel MOSFET On Resistance
BP MOSFET On Resistance
Peak Inductor Current PMOS
Peak Inductor Current NMOS
Maximum Duty Cycle
Efficiency
FSEL = 0
FSEL = 1
From PVIN to SW
TJ up to +85°C, PVIN = 3.6 V
From SW1 to PGND
TJ up to 85°C, PVIN = 3.6 V
From PVIN to FB
TJ up to 85°C, PVIN = 3.6 V
PVIN = 3.6 V, VOUT = 0.8 V
IOUT = 10 mA, PFM mode
5.4
3.085
6
3.429
177
6.6
3.772
MHz
MHz
mW
− 100 − mW
− 217 − mW
− 1.4 −
− 1.0 −
− 100 −
75
A
A
%
%
PVIN = 3.6 V, VOUT = 1.8 V
IOUT = 200 mA, PWM mode
PVIN = 3.9 V, VOUT = 3.3 V
IOUT = 500 mA, PWM mode
90 %
95
%
LINETR
Line Transient Response
PVIN = 3.6 V to 4.2 V
IOUT = 100 mA, VOUT = 0.8 V
TR = TF = 10 ms
50 mVpk
LOADTR
Load Transient Response
PVIN = 3.1 V / 3.6 V / 4.5 V
IOUT = 50 to 150 mA
TR = TF = 0.1 ms
50 mVpk
VCON_BP_EN Vcon Forced Bypass Mode Enter
1.6 V
VCON_BP_EX Vcon Forced Bypass Mode Exit
1.4 V
6. Guaranteed by design and characterized.
7. Operation above 5.5 V input voltage for extended periods may affect device reliability.
8. Tested and guaranteed by correlation.
http://onsemi.com
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NCP6361 arduino
NCP6361
TYPICAL OPERATING CHARACTERISTICS
PVIN = EN = 3.6 V, L = 0.47 mH, COUT = 4.7 mF, CIN = 10 mF, Fsw = 6 MHz, TA = 25°C (unless otherwise noted)
Figure 28. VOUT Accuracy vs Output Current vs
PVIN @ 255C, FSW = 6 MHz, VOUT = 0.8 V
Figure 29. VOUT Accuracy vs Output Current
vs Temperature PVIN = 3.6 V, FSW = 6 MHz,
VOUT = 0.8 V
Figure 30. VOUT Accuracy vs Output Current vs
PVIN @ 255C, FSW = 6 MHz, VOUT = 1.8 V
Figure 31. VOUT Accuracy vs Output Current
vs Temperature PVIN = 3.6 V, FSW = 6 MHz,
VOUT = 1.8 V
Figure 32. VOUT Accuracy vs Output Current vs
PVIN @ 255C, FSW = 6 MHz, VOUT = 3.3 V
Figure 33. VOUT Accuracy vs Output Current
vs Temperature PVIN = 3.6 V, FSW = 6 MHz,
VOUT = 3.3 V
http://onsemi.com
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