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PDF MMUN2218L Data sheet ( Hoja de datos )

Número de pieza MMUN2218L
Descripción Digital Transistors
Fabricantes ON Semiconductor 
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MMUN2218L
Product Preview
Digital Transistor (BRT)
R1 = 1.0 kW, R2 = 10 kW
NPN Transistors with Monolithic Bias
Resistor Network
This digital transistor is designed to replace a single device and its
external resistor bias network. The Bias Resistor Transistor (BRT)
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
BRT eliminates these individual components by integrating them into
a single device. The use of a BRT can reduce both system cost and
board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
30
Vdc
Input Reverse Voltage
VIN(rev)
5
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
PIN CONNECTIONS
PIN 3
COLLECTOR
PIN 1
BASE
R1
(OUTPUT)
(INPUT) R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAM
XXX MG
G
1
SOT−23
CASE 318
STYLE 6
XXX
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. P0
1
Publication Order Number:
MMUN2218L/D

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