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PDF NCE01P13 Data sheet ( Hoja de datos )
| Número de pieza | NCE01P13 | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCE Power Semiconductor | |
| Logotipo |  |
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http://www.ncepower.com
Pb Free Product
NCE01P13
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE01P13 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be
used in a wide variety of applications. It is ESD protested.
General Features
● VDS =-100V,ID =-13A
RDS(ON) <200mΩ @ VGS=-10V
(Typ:170mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density celldesign for ultra low on-resistance
Schematic diagram
Application
● Power switch
● DC/DC converters
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE01P13
NCE01P13
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-100
±20
-13
-9.2
-52
40
0.32
110
-55 To 150
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page  
http://www.ncepower.com
Pb Free Product
NCE01P13
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TC Case Temperature(℃)
Figure 9 Drain Current vs Case Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 Power De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE01P13.PDF ] | |
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