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PDF IXFI7N80P Data sheet ( Hoja de datos )
| Número de pieza | IXFI7N80P | |
| Descripción | Power MOSFETs | |
| Fabricantes | IXYS | |
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PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFA 7N80P
IXFI 7N80P
IXFP 7N80P
VDSS = 800
ID25 =
7
RDS(on) ≤ 1.44
t
rr
≤ 250
V
A
Ω
ns
Symbol
VDSS
VDGR
VGS
V
GSM
ID25
IDM
I
AR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
M
d
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-220, TO-3P)
TO-220
TO-263
Maximum Ratings
800 V
800 V
± 30 V
± 40 V
7A
18 A
4A
20 mJ
300 mJ
10 V/ns
200
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
3g
2.5 g
TO-263 (IXFA)
G
S
(TAB)
Leaded TO-263 (IXFI)
G
D
S
TO-220 (IXFP)
(TAB)
G DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250μA
Characteristic Values
Min. Typ. Max.
800 V
VGS(th)
VDS = VGS, ID = 1 mA
3.0 5.0 V
IGSS VGS = ±30 V, VDS = 0 V
±100 nA
IDSS
RDS(on)
VDS = VDSS
VGS = 0 V
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
25 μA
500 μA
1.44 Ω
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2006 IXYS All rights reserved
DS99597E(08/06)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFI7N80P.PDF ] | |
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