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PDF SUD50P08-25L Data sheet ( Hoja de datos )
| Número de pieza | SUD50P08-25L | |
| Descripción | P-Channel 80-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SUD50P08-25L
Vishay Siliconix
P-Channel 80-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
- 80 0.0252 at VGS = - 10 V
0.029 at VGS = - 4.5 V
ID (A)a
- 50
- 47
Qg (Typ)
55 nC
TO-252
FEATURES
• TrenchFET® Power MOSFET
S
RoHS
COMPLIANT
G
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50P08-25L-E3 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 80
± 20
- 50a
- 42.5a
- 12.5b, c
- 10.5b, c
- 40
- 50a
- 6.9b, c
- 45
101
136
95
8.3b, c
5.8b, c
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under steady state conditions is 40 °C/W.
t ≤ 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
15
0.85
Maximum
18
1.1
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 73443
S-71660-Rev. B, 06-Aug-07
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
60
50
40
Package Limited
30
20
10
0
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
Current Derating*
100
140
120
100
80
60
40
20
0
25
SUD50P08-25L
Vishay Siliconix
50 75 100 125 150
TC - Case Temperature (°C)
Power Derating
175
10
TA =
L · ID
BV - VDD
1
0.000001
0.00001
0.0001
0.001
TA - Time In Avalanche (sec)
Single Pulse Avalanche Capability
0.01
*The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73443
S-71660-Rev. B, 06-Aug-07
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SUD50P08-25L.PDF ] | |
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