|
|
PDF Si3879DV Data sheet ( Hoja de datos )
| Número de pieza | Si3879DV | |
| Descripción | P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de Si3879DV (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
Si3879DV
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
0.070 at VGS = - 5.0 V
0.105 at VGS = - 2.5 V
ID (A)a
- 5.0
- 4.2
Qg (Typ.)
4.5 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
20 0.45 at 1 A
IF (A)a
2
TSOP-6
Top View
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT® Plus Schottky Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• HDD
- DC-DC Converter
• Asynchronous Rectification
S
A
A1
6 D/K
3 mm S
G
25
34
2.85 mm
D/K
D/K
Marking Code
IG XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3879DV-T1-E3 (Lead (Pb)-free)
Si3879DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
VDS
Reverse Voltage (Schottky)
VKA
Gate-Source Voltage (MOSFET)
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) (MOSFET)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (MOSFET)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
TC = 25 °C
TA = 25 °C
IS
IF
Pulsed Forward Current (Schottky)
IFM
TC = 25 °C
Maximum Power Dissipation (MOSFET)
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
PD
Maximum Power Dissipation (Schottky)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 20
20
± 12
- 5.0
- 4.0
- 4.0b, c
- 3.0b, c
- 20
- 2.7
- 1.6b, c
2b
5
3.3
2.1
2.0b, c
1.2b, c
1.9
1.2
1.3b, c
0.9b, c
- 55 to 150
K
Unit
V
A
W
°C
Document Number: 74958
S09-2275-Rev. B, 02-Nov-09
www.vishay.com
1
1 page  
Si3879DV
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
100 0.30
10
TJ = 150 °C
1
TJ = 25 °C
0.25
0.20
0.15
0.10
0.1
0.05
ID = 3.5 A
125 °C
25 °C
0.01
0.0
0.3 0.6 0.9 1.2
VSD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.4
1.5
0.00
1.0 1.8 2.6 3.4 4.2 5.0
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
0.3
0.2
0.1
0.0
- 0.1
ID = 5 mA
40
30
20
10
- 0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Threshold Voltage
100
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10 Limited by
RDS(on)*
1
0.1
0.01
TA = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.001
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 74958
S09-2275-Rev. B, 02-Nov-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet Si3879DV.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| Si3879DV | P-Channel 20-V (D-S) MOSFET | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |