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PDF Si5858DU Data sheet ( Hoja de datos )
| Número de pieza | Si5858DU | |
| Descripción | N-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si5858DU
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
0.039 at VGS = 4.5 V
0.045 at VGS = 2.5 V
0.055 at VGS = 1.8 V
ID (A)a
6
6
6
Qg (Typ.)
6 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V)
VF (V)
Diode Forward Voltage
20 0.375 at 1 A
IF (A)a
1
PowerPAK ChipFET Dual
FEATURES
• Halogen-free
• LITTLE FOOT® Plus Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
APPLICATIONS
• Load Switch for Portable Applications
- Ideal for Boost Circuits
1
A2
K
8
K
7
A
D
6
D
5
3
S4
G
1.9 mm
Marking Code
JB XXX
Lot Traceability
and Date Code
Part # Code
DK
G
RoHS
COMPLIANT
Bottom View
Ordering Information: Si5858DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
SA
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (TJ = 150 °C) (MOSFET)
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VKA
VGS
ID
IDM
IS
IF
IFM
PD
TJ, Tstg
Limit
20
20
±8
6a
6a
7.2b, c
5.8b, c
20
6.9
1.9b, c
1b
7
8.3
5.3
2.3b, c
1.5b, c
7.8
5
2.1
1.3
- 55 to 150
260
Document Number: 73460
S-81449-Rev. B, 23-Jun-08
Unit
V
A
W
W
°C
www.vishay.com
1
1 page  
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
TJ = 150 °C
10
0.08
0.07
Si5858DU
Vishay Siliconix
ID = 4.4 A
TJ = 25 °C
0.06
125 °C
0.05
25 °C
0.04
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.9
0.8
ID = 250 µA
0.7
0.6
0.5
0.4
0.3
0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10 ID(on) limited
0.03
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
40
30
20
10
0
0.001 0.01
0.1
1
10 100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
IDM limited
100 µs
Document Number: 73460
S-81449-Rev. B, 23-Jun-08
1 ms
1
10 ms
100 ms
1s
0.1
TA = 25 °C
10 s
Single Pulse
DC
BVDSS limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
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| PDF Descargar | [ Datasheet Si5858DU.PDF ] | |
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