|
|
PDF MMDF3N04HD Data sheet ( Hoja de datos )
| Número de pieza | MMDF3N04HD | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MMDF3N04HD (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
MMDF3N04HD
Power MOSFET
3 Amps, 40 Volts
N−Channel SO−8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the drain−to−source
diode has a very low reverse recovery time. These devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc−dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Features
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO−8 Package Provided
• Avalanche Energy Specified
• This is a Pb−Free Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage − Continuous
Drain Current
−
−
−
CCPuoolnnstteiinnduuDoouurassin@@CTTuAArre==n27t 50(N°°CCot((eNN3oo)ttee
1)
1)
TotaLliPneowareDr DerisastiipnagtiFonac@torT(A1)= 25°C (Note 1)
VDSS
VDGR
VGS
IDIIDDM
PD
40 Vdc
40 Vdc
± 20 Vdc
3.4 Adc
3.0
40 Apk
2.0 W
16 mW/°C
TotaLliPneowareDr DerisastiipnagtiFonac@torT(A2)= 25°C (Note 2)
PD
1.39
11.11
W
mW/°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
LEVnG=eS4rg=.0y1m−0 HSV,tdaVcr,tDinPSge=aTkJ4I0=L
2=5°9C.0(VADpDk, =
Vdc)
25
Vdc,
THERMAL CHARACTERISTICS
TJ, Tstg
EAS
− 55 to 150
162
°C
mJ
Rating
Symbol Typ Max Unit
Thermal Resistance, (PCB Mount)
− Junction−to−Ambient, (Note 1)
− Junction−to−Ambient, (Note 2)
RRqqJJAA
°C/W
− 62.5
− 90
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1.
2.
When mounted on
When mounted on
@ Steady State)
m1″insimquuamrereFcRo−m4moernGde−d10FRbo−a4rodr(GVG−1S0=b1o0arVd,
@ 10 Secs)
(VGS = 10 V,
3. Repetitive rating; pulse width limited by maximum junction temperature.
http://onsemi.com
V(BR)DSS
40 V
RDS(on) TYP
80 mW @ TBD
ID MAX
3.0 A
N−Channel
D
G
S
8
1
SO−8
CASE 751
STYLE 11
MARKING
DIAGRAM
8
D3N04H
AYWWG
G
1
D3N04H = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
1 8 Drain−1
2 7 Drain−1
3 6 Drain−2
4 5 Drain−2
ORDERING INFORMATION
Device
Package
Shipping†
MMDF3N04HDR2G SO−8 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 5
1
Publication Order Number:
MMDF3N04HD/D
1 page  
MMDF3N04HD
12
QT
9
VDS VGS
6
40
30
20
3 Q1
0
0
Q2
Q3
48
Qg, TOTAL GATE CHARGE (nC)
ID = 3.4 A
TJ = 25°C
12
10
0
16
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000
VDD = 20 V
ID = 3.4 A
VGS = 10 V
TJ = 25°C
100
td(off)
tf
10 td(otnr)
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 12. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
3.5
TJ = 25°C
3.0 VGS = 0 V
2.5
2.0
1.5
1.0
0.5
0
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MMDF3N04HD.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MMDF3N04HD | DUAL TMOS POWER MOSFET 3.4 AMPERES 40 VOLTS |  Motorola Semiconductors |
| MMDF3N04HD | Power MOSFET ( Transistor ) | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |