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Número de pieza | SUD19P06-60 | |
Descripción | P-Channel MOSFET | |
Fabricantes | Vishay | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SUD19P06-60 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! P-Channel 60 V (D-S) MOSFET
SUD19P06-60
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 60 0.060 at VGS = - 10 V
0.077 at VGS = - 4.5 V
ID (A)d
- 19
- 16.8
Qg (Typ)
26
TO-252
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• High Side Switch for Full Bridge Converter
• DC/DC Converter for LCD Display
S
G
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD19P06-60-E3 (Lead (Pb)-free)
SUD19P06-60-GE3 (Lead (Pb)-free and Halogen free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise note)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current, Single Pulse
Repetitive Avalanche Energy, Single Pulsea
L = 0.1 mH
IAS
EAS
Power Dissipation
TC = 25 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 60
± 20
- 18.3
- 8.19
- 30
- 22
24.2
38.5c
2.3b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Case
Notes:
a. Duty cycle 1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Based up on TC = 25 °C.
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
17
45
2.7
Maximum
21
55
3.25
Unit
°C/W
Document Number: 69253
www.vishay.com
S11-2132 Rev. B, 31-Oct-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page THERMAL RATINGS
2
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10- 2
10 -1
1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
SUD19P06-60
Vishay Siliconix
10 100
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69253.
Document Number: 69253
www.vishay.com
S11-2132 Rev. B, 31-Oct-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SUD19P06-60.PDF ] |
Número de pieza | Descripción | Fabricantes |
SUD19P06-60 | P-Channel MOSFET | Vishay |
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