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PDF MBR30200CT-1 Data sheet ( Hoja de datos )
| Número de pieza | MBR30200CT-1 | |
| Descripción | Schottky Rectifier ( Diode ) | |
| Fabricantes | SANGDEST MICROELECTRONICS | |
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SANGDEST
MICROELECTRONICS
MBR30200CT
MBRB30200CT
MBR30200CT-1
Technical Data
Green Products
Data Sheet N0769, Rev. -
MBR30200CT /MBRB30200CT /MBR30200CT-1
SCHOTTKY RECTIFIER
Applications:
• Switching power supply
• Converters
• Free-Wheeling diodes
• Reverse battery protection
Features:
• 150 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• This is a Pb − Free Device
• All SMC parts are traceable to the wafer lot
• Additional testing can be offered upon request
MBR30200CT
Case styles
MBRB30200CT
MBR30200CT-1
TO-220AB
D2PAK
Mechanical Dimensions: In Inches / mm
TO-262
TO-220AB
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
1 page  
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0769, Rev. -
MBR30200CT
MBRB30200CT
MBR30200CT-1
Green Products
1000
100
TJ=25℃
10
0
5 10 15 20 25 30 35 40
Reverse Voltage (V)
Fig.1-Typical Junction Capacitance
1000
100
TJ=125℃
10
1
TJ=25℃
0.1
0.01
0.001
10
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig.2-Typical Reverse Characteristics
100
TJ=125℃
10
TJ=25℃
1
0.4
0.5 0.6 0.7 0.8 0.9
Forward Voltage Drop (V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
1
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MBR30200CT-1.PDF ] | |
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