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PDF IRF9620 Data sheet ( Hoja de datos )
| Número de pieza | IRF9620 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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Power MOSFET
IRF9620, SiHF9620
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 200
VGS = - 10 V
22
12
10
Single
1.5
TO-220AB
S
G
S
D
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
IRF9620PbF
SiHF9620-E3
IRF9620
SiHF9620
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
VGS at - 10 V
TC = 100 °C
ID
Pulsed Drain Currenta
IDM
Linear Derating Factor
Maximum Power Dissipation
Peak Diode Recovery dV/dtb
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. ISD - 3.5 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C.
c. 1.6 mm from case.
LIMIT
- 200
± 20
- 3.5
- 2.0
- 14
0.32
40
- 5.0
- 55 to + 150
300c
10
1.1
UNIT
V
A
W/°C
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91082
S11-0512-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
IRF9620, SiHF9620
Vishay Siliconix
5
RDS(on) measured with current
pulse of 2.0 µs duration. Initial
4 TJ = 25 °C. (Heating effect of
2.0 µs pulse is minimal.)
VGS = - 10 V
3
2
VGS = - 20 V
1
0
0
91082_12
- 4 - 8 - 12 - 16
ID, Drain Current (A)
- 20
Fig. 12 - Typical On-Resistance vs. Drain Current
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25 50 75 100 125 150
91082_13
TC, Case Temperature (°C)
Fig. 13 - Maximum Drain Current vs. Case Temperature
L
Vary tp to obtain
required IL
VDS
VDD
VGS = - 10 V tp
D.U.T.
EC
IL
VDD = 0.5 VDS
0.05 Ω
EC = 0.75 VDS
Fig. 15 - Clamped Inductive Test Circuit
-
+
VDD
IL
tp VDS
EC
Fig. 16 - Clamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
-
+VDD
Fig. 17a - Switching Time Test Circuit
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140
91082_14
TC, Case Temperature (°C)
Fig. 14 - Power vs. Temperature Derating Curve
VGS
10 %
td(on) tr
90 %
VDS
td(off) tf
Fig. 17b - Switching Time Waveforms
Document Number: 91082
S11-0512-Rev. B, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF9620.PDF ] | |
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