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PDF BSO080P03SH Data sheet ( Hoja de datos )
| Número de pieza | BSO080P03SH | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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OptiMOS™-P Power-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Qualified according JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V DS
R DS(on),max
ID
BSO080P03S H
-30 V
8 m:
-14.9 A
PG-DSO-8
Type
BSO080P03S H
Package
P-DSO-8
Marking lead free
080P3S Yes
Halogen free
Yes
packing
dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C1)
T A=70 °C1)
T A=25 °C2)
Value
Unit
10 secs steady state
-14.9
-12.6 A
-11.9
-10
-60
Avalanche energy, single pulse
E AS I D=-14.9 A, R GS=25 :
248 mJ
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
V GS
P tot T A=25 °C1)
T j, T stg
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
±25
2.5 1.79
-55 ... 150
V
W
°C
260
55/150/56
Rev. 1.31
page 1
2010-02-10
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
60
-10 V
-4.5 V
-3.5 V
50
40
30
20
10
0
012
-V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
60
BSO080P03S H
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
25
2.5
2.7
3.0
-3.2 V
20
-3 V 15
3.2
3.5
-2.7 V
-2.5 V
10
5
4.5
10
-2.3 V
0
3 0 10 20
-I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
30
40
60
50
40 40
30
20
10
C °150
C °25
20
0
0
Rev. 1.31
123
-V GS [V]
0
40
page 5
10 20
-I D [A]
30
2010-02-10
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSO080P03SH.PDF ] | |
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