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PDF SPP08P06PH Data sheet ( Hoja de datos )
| Número de pieza | SPP08P06PH | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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SPP08P06P H
SIPMOS® Power-Transistor
Features
Product Summary
· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
Drain source voltage
VDS -60 V
Drain-source on-state resistance RDS(on) 0.3 W
Continuous drain current
ID -8.8 A
· 175°C operating temperature
• Pb-free lead plating; RoHS compliant
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
Type
SPP08P06P H
Package
PG-TO220-3
Pin 1 PIN 2/4 PIN 3
GDS
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
Pulsed drain current
TC = 25 °C
ID puls
Avalanche energy, single pulse
ID = -8.8 A , VDD = -25 V, RGS = 25 W
EAS
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = -8.8 A, VDS = -48 , di/dt = 200 A/µs,
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
-8.8
-6.2
-35.2
70
4.2
6
±20
42
-55...+175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev 1.6
Page 1
2011-08-31
1 page  
SPP08P06P H
Power dissipation
Ptot = f (TC)
SPP08P06P
50
W
40
35
30
25
20
15
10
5
0
0
20 40 60 80 100 120 140 160°C 190
TC
Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
-10 2 SPP08P06P
A tp = 12.0µs
-10 1
100 µs
Drain current
ID = f (TC)
parameter: VGS³ 10 V
SPP08P06P
-10
A
-8
-7
-6
-5
-4
-3
-2
-1
0
0
20 40 60 80 100 120 140 160°C 190
TC
Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SPP08P06P
K/W
10 0
10 -1
-10 0
1 ms
10 ms
DC
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
-10
-1
-10
-1
Rev 1.6
-10 0
-10 1
V -10 2
VDS
Page 5
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
2011-08-31
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SPP08P06PH.PDF ] | |
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