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PDF BSO200P03SH Data sheet ( Hoja de datos )
| Número de pieza | BSO200P03SH | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSO200P03SH (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS™-P Power-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Qualified according JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V DS
R DS(on),max
ID
BSO200P03S H
-30 V
20 mΩ
-9.1 A
PG-DSO-8
Type
BSO200P03S H
Package
PG-DSO-8
Marking
200P3S
Lead free
Yes
Halogen free
Yes
packing
dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C1)
T A=70 °C1)
T A=25 °C2)
Value
Unit
≤10 secs steady state
-9.1 -7.4 A
-7.3 -5.9
-36.4
Avalanche energy, single pulse
E AS I D=-9.1 A, R GS=25 Ω
98 mJ
Gate source voltage
Power dissipation
Operating and storage temperature
ESD rating
V GS
P tot T A=25 °C1)
T j, T stg
Soldering temperature
IEC climatic category; DIN IEC 68-1
±25
2.36
1.56
-55 ... 150
V
W
°C
260
55/150/56
°C
Rev. 1.3
page 1
2010-02-15
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
40
-10 V
35 -4.5 V
30
25
20
15
10
5
0
012
-V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
40
BSO200P03S H
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
60
2.5 V
-2.7 V
-3 V
-3.2 V
-3.5 V
50
-3.5 V
40
-3.2 V
30
-3 V
20
-2.7 V
-2.5 V
-2.3 V
3
10
0
0
10 20
-I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
-4.5 V
-10 V
30
40
40
30 30
20 20
10
0
0
Rev. 1.3
C °150
C °25
123
-V GS [V]
10
0
40
page 5
10 20
-I D [A]
30
2010-02-15
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSO200P03SH.PDF ] | |
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