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PDF TSP16N50M Data sheet ( Hoja de datos )

Número de pieza TSP16N50M
Descripción 500V N-Channel MOSFET
Fabricantes Truesemi 
Logotipo Truesemi Logotipo



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TSP16N50M / TSF16N50M
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 16.0A, 500V, RDS(on) = 0.38@VGS = 10 V
• Low gate charge ( typical 45nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
{D
GDS
TO-220
GD S
TO-220F
◀▲
{G
{S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
TSP16N50M TSF16N50M
500
16 16*
9.6 9.6 *
64 64 *
± 30
853
20
4.5
200 38.5
1.59 0.3
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TSP16N50M
0.63
0.5
62.5
TSF16N50M
3.3
--
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W

1 page




TSP16N50M pdf
Typical Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve
for TSP16N50M
Figure 11-2. Transient Thermal Response Curve
for TSF16N50M

5 Page










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