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PDF SH8J62 Data sheet ( Hoja de datos )
| Número de pieza | SH8J62 | |
| Descripción | 4V Drive Pch+Pch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
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4V Drive Pch+Pch MOSFET
SH8J62
Structure
Silicon P-channel MOSFET
Features
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Switching
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
SH8J62
Taping
TB
2500
Inner circuit
(8) (7) (6)
(5)
∗2 ∗2
∗1 ∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Absolute maximum ratings (Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
−30
±20
±4.5
±18
−1.6
−18
2.0
1.4
150
−55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
www.rohm.com
○c 2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.01 - Rev.A
1 page  
SH8J62
Measurement circuits
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.1-1 Switching Time Test Circuit
VGS
IG(Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.2-1 Gate Charge Test Circuit
Pulse Width
VGS 10%
50%
90% 50%
10%
10%
VDS
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Time Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
Data Sheet
www.rohm.com
○c 2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.01 - Rev.A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SH8J62.PDF ] | |
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