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PDF RSH090N03 Data sheet ( Hoja de datos )
| Número de pieza | RSH090N03 | |
| Descripción | 4V Drive Nch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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4V Drive Nch MOSFET
RSH090N03
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSH090N03
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Source Current
(Body Diode)
Continuous
Pulsed
Total Power Dissipation
Channel Temperature
Storage Temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP ∗1
Is
Isp ∗1
PD ∗2
Tch
Tstg
Limits
30
20
±9.0
±36
1.6
18
2
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Thermal resistance
Parameter
Channel to Ambient
∗ Mounted on a ceramic board.
Symbol
Rth (ch-a)∗
Limits
62.5
Unit
°C / W
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Inner circuit
(8) (7) (6) (5)
(8) (7) (6) (5)
∗2
∗1
(1) (2) (3)
∗1 ESD Protection Diode.
∗2 Body Diode.
(4)
(1) (2) (3) (4)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
∗ A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.A
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet RSH090N03.PDF ] | |
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