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PDF RSH125N03 Data sheet ( Hoja de datos )
| Número de pieza | RSH125N03 | |
| Descripción | 4V Drive Nch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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4V Drive Nch MOSFET
RSH125N03
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8) .
Application
Power switching, DC / DC converter.
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSH125N03
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
30
20
±12.5
±50
1.6
6.4
2
150
−55 to 150
Unit
V
V
A
A
A
A
W
°C
°C
Thermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth (ch-a)∗
Limits
62.5
Unit
°C / W
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Inner circuit
(8) (7) (6)
(5) (8) (7) (6) (5)
∗2
∗1
(1) (2) (3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) (2) (3) (4)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
Downloaded from Elcodis.com electronic components distributor
1/3
2009.12 - Rev.A
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet RSH125N03.PDF ] | |
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