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PDF RP1E075RP Data sheet ( Hoja de datos )
| Número de pieza | RP1E075RP | |
| Descripción | 4V Drive Pch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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4V Drive Pch MOSFET
RP1E075RP
Structure
Silicon P-channel MOSFET
Dimensions (Unit : mm)
MPT6
(Single)
Features
1) Low On-resistance.
2) High power package.
3) 4V drive.
(6) (5) (4)
(1) (2) (3)
Application
Switching
Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
RP1E075RP
Taping
TR
1000
Inner circuit
(6) (5)
(4)
∗2
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain (1)
∗1
(2)
∗1 ESD PROTECTION DIODE
(3) ∗2 BODY DIODE
Absolute maximum ratings (Ta = 25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
Limits
30
20
7.5
30
1.6
30
2.0
150
55 to +150
Unit
V
V
A
A
A
A
W
C
C
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
62.5
Unit
C / W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.08 - Rev.A
1 page  
RP1E075RP
Measurement circuits
VGS
VGS
RG
RG
ID ID
DD.U.U.T.T..
VVDDSS
RRLL
VVDDDD
Fig.1-1 Switching Time Measurement Circuit
VGS
VGS
IG(Const.)
IG(Const.)
RG
RG
IIDD
D.DU..UT..T.
VDVSDS
RLRL
VDVDDD
Fig.2-1 Gate Charge Measurement Circuit
Pulse Width
VGS 10%
50%
90% 50%
10%
10%
VDS
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.08- Rev.A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RP1E075RP.PDF ] | |
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