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Número de pieza | STS3P6F6 | |
Descripción | P-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STS3P6F6 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! STS3P6F6
P-channel 60 V, 0.13 Ω typ., 3 A STripFET™ F6
Power MOSFET in a SO-8 package
Datasheet - production data
Features
8 76 5
4
123
SO-8
Figure 1. Internal schematic diagram
D (5,6,7,8)
Order code
STN3P6F6
VDSS
60 V
RDS(on)max
0.16 Ω @ 10 V
• RDS(on) * Qg industry benchmark
• Extremely low on-resistance RDS(on)
• High avalanche ruggedness
• Low gate drive power losses
ID
3A
Applications
• Switching applications
Description
This device is a P-channel Power MOSFET
developed using the 6th generation of STripFET™
technology, with a new gate structure. The
resulting Power MOSFET exhibits the lowest
RDS(on) in all packages.
G (4)
S (1,2,3)
Order code
STS3P6F6
Table 1. Device summary
Marking
Package
3K60
SO-8
Packaging
Tape and reel
Note:
For the P-channel Power MOSFET the actual polarity of the voltages and the current must
be reversed.
July 2014
This is information on a product in full production.
DocID024437 Rev 2
1/16
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16
1 page STS3P6F6
Electrical characteristics
Note:
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
VGS = 0, ISD = 3 A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, di/dt = 100 A/µs
VDD = 16 V, Tj = 150 °C
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
- 3A
- 12 A
- 1.1 V
- 20
ns
- 17.8
nC
- 1.8
A
For the P-channel Power MOSFET actual polarity of voltages and current has to be
reversed.
DocID024437 Rev 2
5/16
5 Page STS3P6F6
Dim.
A
A1
A2
b
b1
c
c1
D
E
E1
e
h
L
L1
L2
k
ccc
Package mechanical data
Table 8. SO-8 mechanical data
mm
Min.
Typ.
0.10
1.25
0.31
0.28
0.10
0.10
4.80 4.90
5.80 6.00
3.80 3.90
1.27
0.25
0.40
1.04
0.25
0°
Max.
1.75
0.25
0.51
0.48
0.25
0.23
5.00
6.20
4.00
0.50
1.27
8°
0.10
DocID024437 Rev 2
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11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet STS3P6F6.PDF ] |
Número de pieza | Descripción | Fabricantes |
STS3P6F6 | P-channel Power MOSFET | STMicroelectronics |
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