|
|
PDF RT1E040RP Data sheet ( Hoja de datos )
| Número de pieza | RT1E040RP | |
| Descripción | Pch -30V -4A Power MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de RT1E040RP (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
RT1E040RP
Pch -30V -4A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
-30V
45mW
-4A
1.25W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSST8).
4) Pb-free lead plating ; RoHS compliant
lApplication
DC/DC converters
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
lOutline
TSST8
(8)
(7)
(6)
(5)
(1)
(2)
(3)
(4)
lInner circuit
(1) Drain
(2) Drain
(3) Drain
(4) Gate
(5) Source
(6) Drain
(7) Drain
(8) Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
180
8
3,000
TR
UG
Symbol
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
PD *4
Tj
Tstg
Value
-30
4
16
20
1.25
0.55
150
-55 to +150
Unit
V
A
A
V
W
W
°C
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.09 - Rev.B
1 page  
RT1E040RP
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
4
VGS= -10V
Ta=25ºC
Pulsed
3 VGS= -4.5V
VGS= -4.0V
VGS= -2.8V
2
1
VGS= -2.5V
0
0 0.2 0.4 0.6 0.8 1
Drain - Source Voltage : -VDS [V]
Data Sheet
Fig.6 Typical Output Characteristics(II)
4
VGS= -2.8V
Ta=25ºC
Pulsed
3
VGS= -10V
VGS= -4.5V
2
VGS= -4.0V
VGS= -3.0V
1
VGS= -2.5V
0
0 2 4 6 8 10
Drain - Source Voltage : -VDS [V]
Fig.7 Breakdown Voltage
vs. Junction Temperature
60
VGS = 0V
ID = -1mA
Pulsed
40
20
0
-50
0 50 100 150
Junction Temperature : Tj [°C]
Fig.8 Typical Transfer Characteristics
100
VDS= -10V
Pulsed
10
1
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0.1
0.01
0.001
0
1234
Gate - Source Voltage : -VGS [V]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
5/11
2012.09 - Rev.B
5 Page 
RT1E040RP
lDimensions (Unit : mm)
TSST8
D
A
c
Data Sheet
eb
x SA
S
yS
DIM
MILIMETERS
MIN MAX
A 0.75
0.85
A1 0.00
0.05
b 0.22
0.42
c 0.12
0.22
D 2.90
3.10
E 1.50
1.70
e 0.65
HE 1.80
2.00
L 0.05
0.25
L1 0.05
0.25
Lp 0.15
0.34
Lp1 0.15
0.34
x-
0.10
y-
0.10
DIM
MILIMETERS
MIN MAX
e1 1.46
b3 -
0.52
l1 -
0.44
l2 -
0.44
Dimension in mm/inches
b3 e
Patterm of terminal position areas
INCHES
MIN MAX
0.03 0.033
0 0.002
0.009
0.017
0.005
0.009
0.114
0.122
0.059
0.067
0.03
0.071
0.079
0.002
0.01
0.002
0.01
0.006
0.013
0.006
0.013
- 0.004
- 0.004
INCHES
MIN MAX
0.06
- 0.02
- 0.017
- 0.017
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
11/11
2012.09 - Rev.B
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet RT1E040RP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RT1E040RP | Pch -30V -4A Power MOSFET | ROHM Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |