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PDF K3396 Data sheet ( Hoja de datos )
| Número de pieza | K3396 | |
| Descripción | MOSFET ( Transistor ) - 2SK3396 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Silicon Junction FETs (Small Signal)
2SK3396
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For infrared sensor
■ Features
• Low gate-source cutoff current IGSS
• Small capacitance of short-circuit forward transfer capacitance
(common source) Ciss , short-circuit output capacitance (common
source) Coss , reverse transfer capacitance (common source) Crss
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Gate-drain voltage (Source open)
Gate-source voltage (Drain open)
Gate current
Drain current
Power dissipation
Channel temperature
Storage temperature
VGDO
VGSO
IG
ID
PD
Tch
Tstg
−40
−40
10
1
100
125
−55 to +125
Unit
V
V
mA
mA
mW
°C
°C
0.33+–00..0025
3
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5°
Unit: mm
0.10+–00..0025
1: Source
2: Drain
3: Gate
SSSMini3-F1 Package
Marking Symbol: EB
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Gate-drain surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Forward transfer admittance
Gate-source cutoff voltage
Short-circuit forward transfer capacitance
(Common source)
Short-circuit output capacitance
(Common source)
Reverse transfer capacitance
(Common source)
VGDS
IDSS
IGSS
Yfs
VGSC
Ciss
Coss
Crss
IG = −10 µA, VDS = 0
VDS = 10 V, VGS = 0
VGS = −20 V, VDS = 0
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, ID = 1 µA
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0, f = 1 MHz
−40
30 200
− 0.5
0.05
−1.3 −3.0
1.0
V
µA
nA
mS
V
pF
0.4 pF
0.4 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: July 2003
SJF00036AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet K3396.PDF ] | |
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