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PDF IXDN55N120D1 Data sheet ( Hoja de datos )
| Número de pieza | IXDN55N120D1 | |
| Descripción | High Voltage IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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IXDN 55N120 D1
High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
VCES = 1200 V
IC25 = 100 A
V =CE(sat) typ 2.3 V
C miniBLOC, SOT-227 B
E153432
E
GG
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
RBSOA
tSC
(SCSOA)
PC
VISOL
TJ
Tstg
Md
Weight
Symbol
V(BR)CES
VGE(th)
I
CES
I
GES
VCE(sat)
E
Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 20 kΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 90°C, tp = 1 ms
VGE = ±15 V, TJ = 125°C, RG = 22 Ω
Clamped inductive load, L = 30 µH
VGE = ±15 V, VCE = VCES, TJ = 125°C
RG = 22 Ω, non repetitive
TC = 25°C
IGBT
Diode
50/60 Hz; IISOL ≤ 1 mA
Mounting torque
Terminal connection torque (M4)
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
100 A
62 A
124 A
ICM = 100
VCEK < VCES
10
A
µs
450 W
220 W
2500
V~
-40 ... +150
-40 ... +150
°C
°C
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Conditions
Characteristic Values
(T = 25°C, unless otherwise specified)
J
min. typ. max.
VGE = 0 V
IC = 2 mA, VCE = VGE
V =V
CE CES
T = 25°C
J
TJ = 125°C
V = 0 V, V = ± 20 V
CE GE
IC = 55 A, VGE = 15 V
1200
V
4.5 6.5 V
3.8 mA
6 mA
± 500 nA
2.3 2.8 V
E
C
E = Emitter ①, C = Collector
G = Gate,
E = Emitter ①
① Either Emitter terminal can be used as
Main or Kelvin Emitter
Features
● NPT IGBT technology
● low saturation voltage
● low switching losses
● square RBSOA, no latch up
● high short circuit capability
● positive temperature coefficient for
easy paralleling
● MOS input, voltage controlled
● optional ultra fast diode
● International standard package
miniBLOC
Advantages
● Space savings
● Easy to mount with 2 screws
● High power density
Typical Applications
● AC motor speed control
● DC servo and robot drives
● DC choppers
● Uninteruptible power supplies (UPS)
● Switch-mode and resonant-mode
power supplies
© 2002 IXYS All rights reserved
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXDN55N120D1.PDF ] | |
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